Open AccessLow Ron and high robustness ESD protection design for low‐voltage power clamp application
Author(s) -
Song BoBae,
Koo YongSeo
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2391
Subject(s) - electrostatic discharge , robustness (evolution) , cmos , electrical engineering , thyristor , clamper , bipolar junction transistor , electronic circuit , transistor , integrated circuit , voltage , electronic engineering , materials science , engineering , chemistry , biochemistry , gene
An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon‐controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving capacity due to its low on‐resistance and high ESD robustness in comparison with the conventional SCR‐based ESD protection circuit. The conventional SCR‐based ESD protection circuit and the proposed ESD protection circuit were fabricated using a 0.18 µm bipolar CMOS‐double diffused metal‐oxide semiconductor transistor (DMOS) process, and their electrical characteristics and ESD robustness were comparatively analysed using transmission line pulse measurements.