Open AccessHydrogenated amorphous silicon waveguide with vertical pin structure for infrared detection
Author(s) -
Maegami Y.,
Takei R.,
Cong G.,
Ohno M.,
Okano M.,
Horikawa T.,
Yamada K.,
Kamei T.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2359
Subject(s) - materials science , infrared , silicon , amorphous silicon , optoelectronics , waveguide , amorphous solid , optics , crystalline silicon , physics , crystallography , chemistry
Infrared light detection capability of a hydrogenated amorphous silicon waveguide with a vertically stacked pin structure by utilising defect absorption, i.e. transition between dangling bond defect and extended states is demonstrated. The responsivities for a 0.6 mm‐long device are ∼6.2 and ∼0.22 mA/W at 1300 and 1550 nm wavelength, respectively.