Hydrogenated amorphous silicon waveguide with vertical pin structure for infrared detection | Zendy

Maegami Y. | Zendy; Takei R. | Zendy; Cong G. | Zendy; Ohno M. | Zendy; Okano M. | Zendy; Horikawa T. | Zendy; Yamada K. | Zendy; Kamei T. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Hydrogenated amorphous silicon waveguide with vertical pin structure for infrared detection

Author(s) -

Maegami Y.,

Takei R.,

Cong G.,

Ohno M.,

Okano M.,

Horikawa T.,

Yamada K.,

Kamei T.

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2016.2359

Subject(s) - materials science , infrared , silicon , amorphous silicon , optoelectronics , waveguide , amorphous solid , optics , crystalline silicon , physics , crystallography , chemistry

Infrared light detection capability of a hydrogenated amorphous silicon waveguide with a vertically stacked pin structure by utilising defect absorption, i.e. transition between dangling bond defect and extended states is demonstrated. The responsivities for a 0.6 mm‐long device are ∼6.2 and ∼0.22 mA/W at 1300 and 1550 nm wavelength, respectively.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research