Open AccessDouble random sources: low‐cost method to enhance local optima escaping ability in CMOS‐type Ising chips
Author(s) -
Zhang Jian,
Chen Shuming,
Yang Chao,
Wang Yaohua
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2218
Subject(s) - cmos , ising model , convergence (economics) , type (biology) , efficient energy use , computer science , energy (signal processing) , local optimum , electronic engineering , algorithm , statistical physics , mathematics , physics , engineering , electrical engineering , statistics , ecology , economics , biology , economic growth
The local optima escaping ability, which is critical for both accuracy and efficiency of CMOS‐type Ising chips, is greatly affected by the probability to accept a worse state. Theoretically, such probability is determined by both energy barriers and temperature. However, due to the implementation complexity, the energy barrier is not considered in existing CMOS‐type Ising chips. We propose a double random source based method, which re‐correlates the probability above with the energy barrier, while eliminating calculating the energy barrier for low cost is proposed. The experiments demonstrate that the method can improve the accuracy of CMOS‐type Ising chips by 7.6%, confining the error within 1%. Moreover, it can accelerate the convergence process by 100×.