Open AccessMagnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer
Author(s) -
Nevinskas I.,
Vizbaras K.,
Vizbaras A.,
Trinkūnas A.,
Krotkus A.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2216
Subject(s) - terahertz radiation , materials science , femtosecond , optoelectronics , laser , molecular beam epitaxy , epitaxy , substrate (aquarium) , optics , common emitter , layer (electronics) , physics , oceanography , composite material , geology
An undoped GaSb epitaxial layer has been grown on a GaAs substrate by molecular beam epitaxy. It has been found that GaSb could be a potential surface terahertz (THz) emitter photoexcited by 1.55 μm femtosecond laser pulses since the maximum optical‐to‐THz power conversion efficiency is at around this wavelength. The THz field strength is 10 dB weaker as compared with that generated from narrow‐gap InAs at these energies of quanta. Furthermore, the samples were exposed to a constant magnetic field which enhances THz emission and allows signal registration in the line‐of‐sight geometry.