Open Accessmind the gap
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2157
Subject(s) - optoelectronics , materials science , semiconductor , gallium nitride , heterojunction , molecular beam epitaxy , semiconductor device , power semiconductor device , epitaxy , engineering physics , breakdown voltage , band gap , wide bandgap semiconductor , field effect transistor , transistor , voltage , electrical engineering , nanotechnology , engineering , layer (electronics)