Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors | Zendy

Biolek Z. | Zendy; Biolek D. | Zendy; Biolkova V. | Zendy

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Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

Author(s) -

Biolek Z.,

Biolek D.,

Biolkova V.

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2016.2138

Subject(s) - memristor , hysteresis , control theory (sociology) , ideal (ethics) , mathematics , neighbourhood (mathematics) , amplitude , mathematical analysis , topology (electrical circuits) , computer science , physics , electronic engineering , engineering , artificial intelligence , condensed matter physics , control (management) , quantum mechanics , combinatorics , philosophy , epistemology

The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.

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