Open AccessFabrication of doped Pb(Zr,Ti)O 3 capacitors on Pt substrates with different orientations
Author(s) -
Tamano R.,
Amano T.,
Takada Y.,
Okamoto N.,
Saito T.,
Yoshimura T.,
Fujimura N.,
Higuchi K.,
Kitajima A.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.1949
Subject(s) - materials science , ferroelectricity , doping , capacitor , crystallinity , thin film , electrode , fabrication , analytical chemistry (journal) , optoelectronics , nanotechnology , composite material , dielectric , voltage , electrical engineering , chemistry , medicine , alternative medicine , pathology , chromatography , engineering
The effects of crystallographic orientation on the ferroelectric properties of Pb(Zr,Ti)O 3 (PZT) thin films grown on (111) and (100)‐oriented Pt substrates are investigated. The effects of doping PZT with species X (forming PXZT) thin films (Pb:X:Zr:Ti, 113:3:30:70; X = La, Nb, or Y) using chemical solution deposition were studied. The crystallinity of all PXZT films was almost identical. The remnant polarisation of the un‐doped, La‐, Nb‐, and Y‐doped PZT capacitors with Pt(111) bottom electrodes were 133.4, 64.7, 60.2, and 98.4 µC/cm 2 , respectively. In ferroelectric capacitors with Pt(100) bottom electrodes, the remnant polarisations were 185.6, 148.1, 103.1, and 135.7 µC/cm 2 , respectively. The remnant polarisation was larger with Pt(100) than with Pt(111). The initial remnant polarisation of the un‐doped PZT capacitors was larger than that of PXZT.