Open AccessGaN planar Schottky barrier diode with cut‐off frequency of 902 GHz
Author(s) -
Liang Shixiong,
Fang Yulong,
Xing Dong,
Zhang Zhirong,
Wang Junlong,
Guo Hongyu,
Zhang Lisen,
Gu Guodong,
Feng Zhihong
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.1937
Subject(s) - optoelectronics , planar , schottky diode , schottky barrier , materials science , diode , metal–semiconductor junction , computer science , computer graphics (images)
GaN planar Schottky barrier diode (SBD) with an n − /n + structure was grown and fabricated on sapphire substrate. An n + GaN epitaxial layer with doping concentration of 8 × 10 18 cm −3 was employed to reduce the parasitic resistance. An air‐bridge structure and 50 μm substrate thinning‐down technique were adopted in order to reduce the parasitic capacitance. A record cut‐off frequency ( f c ) of 902 GHz was achieved for GaN planar SBD with 2 μm anode diameter.