
Dielectric relaxation in glassy Se 90 Cd 6 In 4
Author(s) -
Shukla N.,
Mehta N.,
Dwivedi D.K.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.1798
Subject(s) - dielectric , chalcogenide , materials science , relaxation (psychology) , condensed matter physics , dielectric loss , alloy , frequency dependence , charge (physics) , analytical chemistry (journal) , thermodynamics , nuclear magnetic resonance , composite material , optoelectronics , chemistry , physics , psychology , social psychology , quantum mechanics , chromatography
In the present Letter frequency (5 × 10 2 Hz–1 × 10 5 Hz) and temperature (308–333 K) dependence of dielectric parameter of Se 90 Cd 6 In 4 glassy alloy has been examined. Conventional melt quench technique has been applied to prepare Se 90 Cd 6 In 4 glassy alloy. It is observed that dielectric constant ( ε ′) and dielectric loss factor ( ε ″) change with frequency and temperature. The dielectric loss data has been utilised to determine the barrier height W m , which is in accordance with the Elliott's theory of hoping of charge carriers over potential barrier between charge defect states in case of chalcogenide glasses.