Open AccessImproved performance of InGaN/GaN multilayer solar cells with an atomic‐layer‐deposited Al 2 O 3 passivation film
Author(s) -
Miyoshi M.,
Kabata T.,
Tsutsumi T.,
Mori T.,
Kato M.,
Egawa T.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.1574
Subject(s) - passivation , materials science , optoelectronics , atomic layer deposition , quantum efficiency , layer (electronics) , solar cell , carrier lifetime , wavelength , silicon , nanotechnology
The surface passivation for InGaN/GaN multilayer solar cells was investigated, and it was confirmed that the device with an atomic‐layer‐deposited (ALD) Al 2 O 3 passivation film showed high internal and external quantum efficiencies of 99 and 84%, respectively, along with a high energy conversion efficiency of 1.31% under a 1‐sun air‐mass 1.5 global illumination. The current−voltage characteristics indicated that the ALD Al 2 O 3 film improved the surface electrical stability. The carrier lifetime measurements revealed that the ALD Al 2 O 3 film reduced the surface carrier recombination rate and thereby contributed to the improvement of the solar cell performance in a short wavelength region.