Improved performance of InGaN/GaN multilayer solar cells with an atomic‐layer‐deposited Al 2 O 3  passivation film | Zendy

Miyoshi M. | Zendy; Kabata T. | Zendy; Tsutsumi T. | Zendy; Mori T. | Zendy; Kato M. | Zendy; Egawa T. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Improved performance of InGaN/GaN multilayer solar cells with an atomic‐layer‐deposited Al 2 O 3 passivation film

Author(s) -

Miyoshi M.,

Kabata T.,

Tsutsumi T.,

Mori T.,

Kato M.,

Egawa T.

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2016.1574

Subject(s) - passivation , materials science , optoelectronics , atomic layer deposition , quantum efficiency , layer (electronics) , solar cell , carrier lifetime , wavelength , silicon , nanotechnology

The surface passivation for InGaN/GaN multilayer solar cells was investigated, and it was confirmed that the device with an atomic‐layer‐deposited (ALD) Al 2 O 3 passivation film showed high internal and external quantum efficiencies of 99 and 84%, respectively, along with a high energy conversion efficiency of 1.31% under a 1‐sun air‐mass 1.5 global illumination. The current−voltage characteristics indicated that the ALD Al 2 O 3 film improved the surface electrical stability. The carrier lifetime measurements revealed that the ALD Al 2 O 3 film reduced the surface carrier recombination rate and thereby contributed to the improvement of the solar cell performance in a short wavelength region.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research