High voltage and high current density vertical GaN power diodes | Zendy

Armstrong A.M. | Zendy; Allerman A.A. | Zendy; Fischer A.J. | Zendy; King M.P. | Zendy; Heukelom M.S. | Zendy; Moseley M.W. | Zendy; Kaplar R.J. | Zendy; Wierer J.J. | Zendy; Crawford M.H. | Zendy; Dickerson J.R. | Zendy

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High voltage and high current density vertical GaN power diodes

Author(s) -

Armstrong A.M.,

Allerman A.A.,

Fischer A.J.,

King M.P.,

Heukelom M.S.,

Moseley M.W.,

Kaplar R.J.,

Wierer J.J.,

Crawford M.H.,

Dickerson J.R.

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2016.1156

Subject(s) - materials science , optoelectronics , diode , current (fluid) , power (physics) , voltage , electrical engineering , current density , gallium nitride , wide bandgap semiconductor , high voltage , physics , engineering , nanotechnology , layer (electronics) , quantum mechanics

The realisation of a GaN high voltage vertical p – n diode operating at >3.9 kV breakdown with a specific on‐resistance <0.9 mΩ cm 2 is reported. Diodes achieved a forward current of 1 A for on‐wafer, DC measurements, corresponding to a current density >1.4 kA/cm 2 . An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current–voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

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