Open AccessHigh voltage and high current density vertical GaN power diodes
Author(s) -
Armstrong A.M.,
Allerman A.A.,
Fischer A.J.,
King M.P.,
Heukelom M.S.,
Moseley M.W.,
Kaplar R.J.,
Wierer J.J.,
Crawford M.H.,
Dickerson J.R.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.1156
Subject(s) - diode , optoelectronics , materials science , electric field , breakdown voltage , voltage , current density , current (fluid) , gallium nitride , wide bandgap semiconductor , power semiconductor device , wafer , limit (mathematics) , high voltage , electrical engineering , physics , engineering , nanotechnology , quantum mechanics , mathematical analysis , mathematics , layer (electronics)
The realisation of a GaN high voltage vertical p – n diode operating at >3.9 kV breakdown with a specific on‐resistance <0.9 mΩ cm 2 is reported. Diodes achieved a forward current of 1 A for on‐wafer, DC measurements, corresponding to a current density >1.4 kA/cm 2 . An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current–voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.