Open Access60 GHz 5‐bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra‐thick metals
Author(s) -
Gao H.,
Ying K.,
MattersKammerer M.K.,
Harpe P.,
Wang B.,
Liu B.,
Serdijn W.A.,
Baltus P.G.M.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.0949
Subject(s) - phase shift module , insertion loss , cmos , materials science , electrical engineering , return loss , optoelectronics , chip , transistor , phase (matter) , electromagnetic shielding , electronic engineering , engineering , physics , voltage , antenna (radio) , quantum mechanics
A 5‐bit digital controlled switch‐type passive phase shifter realised in a 40 nm digital CMOS technology without ultra‐thick metals for the 60 GHz Industrial, Scientific and Medical (ISM) band is presented. A patterned shielding with electromagnetic bandgap structure and a stacked metals method to increase the on‐chip inductor quality factor are proposed. To reduce the insertion loss from the transistors, the transistor switches are implemented with a body–source connection. For all 32 states, the minimum phase error is 1.5°, and the maximum phase error is 6.8°. The measured insertion loss is −20.9 ± 1 dB including pad loss at 60 GHz and the return loss is >10 dB over 57–64 GHz. The total chip size is 0.24 mm 2 with 0 mW DC power consumption.