Open AccessShort‐wave infrared photodetector with high responsivity and signal‐to‐noise ratio
Author(s) -
Zhang Yue
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.0555
Subject(s) - responsivity , photodetector , detector , optoelectronics , optics , infrared , dark current , materials science , noise (video) , molecular beam epitaxy , infrared detector , signal (programming language) , light intensity , layer (electronics) , depletion region , signal to noise ratio (imaging) , physics , epitaxy , semiconductor , nanotechnology , programming language , artificial intelligence , computer science , image (mathematics)
Short‐wave infrared photodetectors with a p‐charge layer and double barrier structure are designed and fabricated by molecular beam epitaxy. The current intensity is lowered by three orders of magnitude compared with the detector without the p‐charge layer. The tested responsivity of the detector is 485 A/W at 0.31 V, when the power of the incident light is 10 nW. By adding the p‐charge layer, the signal‐to‐noise ratio of the detector is promoted by 30 times, which reaches 1712 at 0.3 V, when the power of the incident light is 1 nW.