Open AccessShort wavelength enhanced phototransistor with n ‐doped porous silicon layer
Author(s) -
Wang YaoChin,
Lin BorShyh,
Yang ZuPo
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.0412
Subject(s) - homojunction , photodiode , materials science , optoelectronics , photoresistor , porous silicon , silicon , heterojunction , thin film , layer (electronics) , wavelength , transistor , optics , nanotechnology , electrical engineering , physics , engineering , voltage
A phototransistor with aluminium (Al)/porous silicon (Si)/epitaxial‐Si structures was proposed and was fabricated and characterised with short wavelength enhanced operating. We proposed the short wavelength response of the Si‐based thin film phototransistor; it can be enhanced by introducing thin porous Si (PS) layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible‐light sensitive phototransistors. Experimental results showed that the short wavelength responses in the developed devices were enhanced as compared with the Si‐based homojunction transistors, this comparably medium optical gain indicated that the developed Al/PSi/epitaxial‐Si heterojunction thin film phototransistor got potential for practical Si‐based optical‐electron integrated‐circuit and biophotonics applications.