Open AccessOxygen pressure control during the sputtering deposition of channel for flexible thin‐film transistors with low‐temperature process compatibility
Author(s) -
Park M.J.,
Lee W.H.,
Kim K.A.,
Yun D.J.,
Yoon S.M.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.0339
Subject(s) - thin film transistor , materials science , transistor , sputtering , thin film , optoelectronics , oxygen , partial pressure , compatibility (geochemistry) , composite material , nanotechnology , electrical engineering , voltage , layer (electronics) , chemistry , organic chemistry , engineering
Effects of oxygen pressure control during the sputtering deposition were investigated to obtain low‐temperature process compatibility for flexible In–Ga–Zn–O (IGZO) thin‐film transistors (TFTs). Device characteristics of the IGZO TFTs fabricated on the poly(ethylene) naphthalate substrates were optimised at an oxygen partial pressure of 2%. Device performances were successfully obtained even at a curvature radius of 2.6 mm under the bending situation. Robust bias‐stress and bias‐illumination stress stabilities were also confirmed at a process temperature as low as 150°C.