Open AccessDC–X‐band high‐power SOI CMOS T/R switch
Author(s) -
Suh B.,
Min B.W.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.0179
Subject(s) - silicon on insulator , electrical engineering , transistor , cmos , materials science , optoelectronics , shunt (medical) , insertion loss , transmitter , engineering , silicon , voltage , channel (broadcasting) , medicine , cardiology
A high‐power single‐pole double‐throw transmit/receive (T/R) switch in a silicon‐on‐insulation (SOI) CMOS process is presented. The T/R switch is based on the series–shunt configuration, and the high performance is achieved by utilising SOI characteristics such as floating body transistors and SOI trench (TQ trench). To improve power handling capability, ten thick gate oxide transistors are stacked in transmitter (TX) shunt and receiver (RX) series paths with the source and drain of transistors biased. The measured insertion losses of TX and RX modes are <0.5 and <0.9 dB, respectively. The measured isolations of TX and RX modes are >30 and >23 dB up to 12 GHz. The measured input 1 dB compression point is 34 dBm.