Open AccessHigh‐performance charge plasma based normally OFF GaN MOSFET
Author(s) -
Loan S.A.,
Verma S.,
Alamoud A.M.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.4517
Subject(s) - transconductance , materials science , gallium nitride , optoelectronics , mosfet , threshold voltage , plasma , epitaxy , piezoelectricity , wide bandgap semiconductor , nitride , leakage (economics) , voltage , transistor , electrical engineering , nanotechnology , physics , layer (electronics) , quantum mechanics , composite material , economics , macroeconomics , engineering
A high‐performance enhancement‐mode charge plasma based gallium nitride (CP‐GaN) MOSFET is stimulated. Here, metals of same work functions are used to induce n ‐ type charge plasma in an undoped GaN film to realise source and drain regions of a GaN MOSFET. The proposed device is not hetrostructure like the conventional GaN/AlGaN devices and is hence free from hetero‐epitaxial defects and inverse piezoelectric effects, and can have reduced leakage and can be more reliable. An extensive simulation study has revealed that the proposed CP‐GaN device exhibits a threshold voltage of 1.4 V, large I ON / I OFF ratio of 10 8 and transconductance ( g m ) of 308 mS/mm.