Open AccessModelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory
Author(s) -
Son Y.,
Kang M.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.4427
Subject(s) - trapping , flash (photography) , trap (plumbing) , charge (physics) , flash memory , materials science , arrhenius equation , optoelectronics , computational physics , atomic physics , physics , activation energy , chemistry , optics , computer science , embedded system , ecology , organic chemistry , quantum mechanics , meteorology , biology
Data retention characteristics are investigated in charge trapping flash memory. The physical root cause of the non‐Arrhenius behaviour, which is the general retention characteristic in charge trap flash memories, is numerical modelling that the charge loss mechanism is associated with the trap energy level in the charge storage area. For expression of the charge loss in the relatively shallow traps, multiphonon emission model is adopted. Finally, the ratio of the relatively shallow traps to middle and deep level traps is extracted in a sample data.