Open AccessDielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement
Author(s) -
Raad B.,
Nigam K.,
Sharma D.,
Kondekar P.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.4348
Subject(s) - ambipolar diffusion , dielectric , materials science , optoelectronics , work function , work (physics) , figure of merit , gate dielectric , radio frequency , thermal conduction , electrical engineering , electronic engineering , nanotechnology , transistor , engineering , physics , electron , voltage , mechanical engineering , composite material , layer (electronics) , quantum mechanics
A novel approach to suppress the ambipolar behaviour and enhance RF parameters is proposed for the first time. For this, the dielectric and gate material work function engineering is used to suppress the ambipolar behaviour individually. Further, the combination of gate dielectric and gate material work function engineering is used to suppress the ambipolar conduction in huge amount and to eliminate the hot carriers effects. Apart from these, the proposed work improves the ON‐state current and RF figures of merit for symmetric devices.