Open AccessImproving graphene non‐volatile memory using self‐aligned gate
Author(s) -
Lee K.,
Kim O.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.4274
Subject(s) - graphene , materials science , optoelectronics , ion , current (fluid) , non volatile memory , channel (broadcasting) , nanotechnology , electrical engineering , chemistry , computer science , telecommunications , engineering , organic chemistry
As the scale of graphene‐based non‐volatile memory is reduced, the ratio of access resistance R A to total channel resistance R TOT is increased. To investigate the effect of the R A on I–V characteristics, we fabricated devices with various access lengths L A and self‐aligned structure. Proposed structure using self‐aligned gate minimises L A , and thereby improves the drain current, ‘on/off’ current ratio I ON / I OFF and transfer characteristics. In proposed structure, ‘off’ current is increased from 0.16 to 0.28 mA because R TOT was reduced; ‘on’ current increased from 0.35 to 0.72 mA, but I ON / I OFF increased from 2.18 to 2.57. Proposed structure also had larger memory window (8.5 V) than did conventional devices (6.7 V).