Open AccessImproving breakdown performance for novel LDMOS using n + floating islands in substrate
Author(s) -
Chen Yinhui,
Hu Sheng Dong,
Cheng Kun,
Jiang Yuyu,
Zhou Jianlin,
Tang Fang,
Zhou Xi Chuan,
Gan Ping
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.4140
Subject(s) - ldmos , substrate (aquarium) , optoelectronics , materials science , electrical engineering , physics , breakdown voltage , engineering , voltage , oceanography , geology
A novel lateral double‐diffusion MOS (LDMOS) with n + floating islands in the substrate (NFI LDMOS) is proposed. In the NFI LDMOS, a series of n + floating islands are introduced into the substrate. On the condition of a high‐voltage blocking state, n + floating islands induce the high potential from the drain region to the source region, which modulates the drift region's electric field and leads to a higher breakdown voltage (BV). What is more, the specific on‐resistance ( R on , sp ) is reduced by the higher doping concentration of the drift region due to the n + floating islands. Compared with the conventional LDMOS at the same 40 μm drift region, the BV of the NFI LDMOS is enhanced by 74.6% and R on , sp is reduced by 19.7%. So, the proposed NFI LDMOS possesses a higher figure‐of‐merit (FOM).