Open AccessReconfigurable package integrated 20 W RF power GaN HEMT with discrete thick‐film MIM BST varactors
Author(s) -
Preis S.,
Wiens A.,
Maune H.,
Heinrich W.,
Jakoby R.,
Bengtsson O.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.4109
Subject(s) - materials science , gallium nitride , optoelectronics , reconfigurability , high electron mobility transistor , electrical engineering , voltage , impedance matching , resistive touchscreen , transistor , power (physics) , smith chart , electrical impedance , electronic engineering , computer science , engineering , telecommunications , layer (electronics) , physics , quantum mechanics , composite material
A novel package integrated solution for gallium nitride high‐electron‐mobility transistors with an electronically two‐dimensional reconfigurable L‐section matching network is presented. Thick‐film barium‐strontium‐titanate (BST) varactors are used to realise a tunability of the load impedance of 1:2 in resistive and 1:1.5 in reactive parts, respectively, applying tuning voltages of up to 200 V. The tuneable module achieves a peak output power of 43.2 dBm (20.9 W). Comparison with simulated results using field simulations and a large‐signal model shows good agreement in terms of output power and power added efficiency and thus proves the concept of using metal–insulator–metal BST varactors for reconfigurability.