Open AccessResistive switching characteristics of PECVD‐deposited porous SiO 2 ‐based electrochemical metallisation memory cells
Author(s) -
Zhou Jumei
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.4058
Subject(s) - plasma enhanced chemical vapor deposition , materials science , resistive random access memory , porosity , chemical vapor deposition , silane , porous silicon , indium tin oxide , tin dioxide , optoelectronics , nanotechnology , electrolyte , silicon , layer (electronics) , electrode , composite material , chemistry , metallurgy
Porous silicon dioxide (SiO 2 ) solid‐electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases. The resistive switching characteristics of the ∼280 nm‐thick porous SiO 2 ‐based electrochemical metallisation memory cells were investigated. The SEM and TEM images showed that the PECVD‐deposited SiO 2 film was composed of nanogranular SiO 2 particles with a plenty of nano‐channels. The electrical measurements showed that the silver/porous SiO 2 /indium tin oxide vertical cells exhibited good resistive switching behaviours with low switching voltage (<1.0 V) and good retention performance. Such porous SiO 2 ‐based devices are promising for memory‐based flexible electronics applications.