Open AccessTechnical noise in K‐band low‐noise cryogenic amplifier
Author(s) -
Parker S.R.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.4024
Subject(s) - dbc , phase noise , noise temperature , flicker noise , amplifier , materials science , noise (video) , noise spectral density , offset (computer science) , optoelectronics , y factor , electrical engineering , low noise amplifier , sideband , noise power , physics , noise figure , power (physics) , optics , radio frequency , engineering , computer science , cmos , quantum mechanics , artificial intelligence , image (mathematics) , programming language
The performance of a 15–29 GHz low‐noise high‐electron‐mobility transistor amplifier at room and cryogenic temperatures is reported. The close‐to‐carrier technical noise is measured for frequency offsets from 100 mHz to 100 kHz and the effect of adjusting the DC power biasing is investigated. An order of magnitude improvement in intrinsic phase noise is achieved by optimising the bias settings away from manufacturer specifications, giving a single‐sideband phase noise power spectral density at 1 Hz offset of −100 dBc/Hz and −105 dBc/Hz for a 26.6 GHz carrier at room temperature and 6.5 K, respectively.