Open AccessFloating body gate cell with fast write speed for embedded memory applications
Author(s) -
He Weiwei,
Chen Jing,
Wu Qingqing,
Luo Jiexin,
Chai Zhan,
Huang Jianqiang,
Wang Xi
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.3714
Subject(s) - memory cell , transistor , cmos , computer science , power consumption , non volatile memory , planar , silicon on insulator , electrical engineering , voltage , power (physics) , logic gate , transmission gate , computer hardware , electronic engineering , optoelectronics , materials science , engineering , silicon , physics , computer graphics (images) , quantum mechanics
Novel two‐transistor embedded memory – floating body gate cell – is implemented on planar SOI CMOS technology without adding extra masks. Since channel current is designed for memory cell write operations, this cell demonstrates ultra‐fast write speed which is comparable with static RAM cell. The decoupled write and read structure ensures small operation power consumption and avoid false read. The low operation voltages of this cell lead to the excellent endurance performance. In addition, retention time is greatly enhanced due to the gate‐to‐drain underlap design.