Open AccessDead‐time optimisation for a phase‐shifted dc–dc full bridge converter with GaN HEMT
Author(s) -
Joo D.M.,
Lee B.K.,
Kim J.S.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.3650
Subject(s) - high electron mobility transistor , converters , dead time , gallium nitride , transistor , electronic engineering , power semiconductor device , power (physics) , electrical engineering , computer science , voltage , materials science , engineering , physics , layer (electronics) , quantum mechanics , composite material
An accurate dead‐time adjustment method for phase‐shifted full bridge (PSFB) converter is presented. This method allows the dead‐time of converters to be optimised to meet zero voltage switching condition. The optimum dead‐time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high‐electron‐mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed dead‐time optimisation method was verified by experimental results with a 600 W prototype.