Open AccessSplit frequency high‐voltage driver for dynamic load modulated RF amplifiers
Author(s) -
Watkins G.T.,
Mimis K.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.3593
Subject(s) - varicap , amplifier , rf power amplifier , electrical engineering , radio frequency , transistor , voltage , electronic engineering , bandwidth (computing) , engineering , computer science , telecommunications , physics , cmos , capacitance , electrode , quantum mechanics
Dynamic load modulation is a technique for increasing RF power amplifier efficiency by manipulating a tuneable matching network (TMN) between the RF transistor and the antenna in harmony with the envelope of the transmitted signal. Generally, TMNs are based on varactor diodes with control voltage swings approaching 100 V, but future devices are likely to need far greater. The varactor driver amplifier proposed here uses a split frequency architecture to amplify a 3 MHz bandwidth 3GPP 4G long‐term evolution envelope signal. Under these conditions, it can produce a peak voltage of 166 V at a power consumption of 0.7 W.