Open AccessHigh‐frequency characteristics of L g = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al 2 O 3 gate insulator
Author(s) -
Kim T.W.,
Kim J.S.,
Kim D.K.,
Shin S.H.,
Park W.S.,
Banerjee S.,
Kim D.H.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.3573
Subject(s) - high electron mobility transistor , optoelectronics , materials science , gallium arsenide , transistor , induced high electron mobility transistor , indium gallium arsenide , electron mobility , atomic layer deposition , transconductance , indium , subthreshold swing , threshold voltage , electrical engineering , layer (electronics) , voltage , nanotechnology , engineering
High‐frequency characteristics of L g = 60 nm In 0.7 Ga 0.3 As MOS‐high‐electron‐mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic‐layer‐deposition is reported. Fabricated In 0.7 Ga 0.3 As MOS‐HEMTs with L g = 60 nm exhibit subthreshold‐swing (SS) = 89 mV/dec., drain‐induced‐barrier‐lowering = 98 mV/V, g m_max = 1.1 mS/μm, f T = 187 GHz and f max = 202 GHz at V DS = 0.5 V. The high‐frequency characteristics showed is the best balanced demonstration of f T and f max in the buried‐channel indium gallium arsenide MOS‐HEMTs, revealing a strong potential of the buried‐channel design scheme for future high frequency, low‐noise and high‐performance logic applications.