Open AccessAl:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O 3 capacitors
Author(s) -
Takada Y.,
Okamoto N.,
Saito T.,
Kondo K.,
Yoshimura T.,
Fujimura N.,
Higuchi K.,
Kitajima A.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.3539
Subject(s) - ferroelectricity , materials science , capacitor , pulsed laser deposition , oxygen , electrode , annealing (glass) , torr , analytical chemistry (journal) , coercivity , stacking , optoelectronics , thin film , nanotechnology , composite material , voltage , dielectric , nuclear magnetic resonance , chemistry , electrical engineering , physics , organic chemistry , chromatography , condensed matter physics , thermodynamics , engineering
Ferroelectric (Pb,La)(Zr,Ti)O 3 capacitors were fabricated using chemical solution deposition with Al:ZnO (AZO) top electrodes that were deposited using pulsed laser deposition (PLD), where the oxygen pressure was varied systematically. The oxygen pressure during deposition of the AZO layer affected the surface morphology of the AZO top electrodes, as well as the ferroelectric properties of the capacitors. As the oxygen pressure increased, the AZO grains gradually appeared clearer in the SEM images, indicating less dense stacking, and the polarisation–voltage hysteresis loops expanded horizontally. The largest values of remnant polarisation and coercive voltage were obtained at 10 Pa. Appropriate ferroelectric properties were obtained for oxygen pressures in the range of 0.5–2.0 Pa. The hydrogen degradation resistance during annealing in 3% H 2 200°C and 1 Torr was independent of oxygen pressure during PLD.