Open AccessSn‐doped ZnO thin‐film transistors with AZO, TZO and Al heterojunction source/drain contacts
Author(s) -
Zhang Yi,
Han Dedong,
Huang Lingling,
Dong Junchen,
Cong Yingying,
Cui Guodong,
Zhang Xiaomi,
Zhang Xing,
Zhang Shengdong,
Wang Yi
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.3277
Subject(s) - materials science , thin film transistor , electrode , optoelectronics , doping , heterojunction , subthreshold slope , zinc , substrate (aquarium) , thin film , tin , saturation (graph theory) , tin oxide , layer (electronics) , contact resistance , transistor , threshold voltage , composite material , nanotechnology , electrical engineering , metallurgy , voltage , chemistry , oceanography , geology , engineering , mathematics , combinatorics
Bottom gate, top contact thin‐film transistors (TFTs) with transparent Sn‐doped zinc oxide as the active layer have been fabricated on glass substrate at room temperature. Indium tin oxide, alumni zinc oxide (AZO) and Al thin films serve as the source/drain (S/D) electrode. It turns out that devices with AZO S/D electrodes exhibit preferable properties such as a saturation mobility of 13.6 cm 2 /Vs, a subthreshold slope of 381 mV/decade, a V th of 3.47 V and an on/off current ratio of 3.1 × 10 7 . Moreover, the superior output characteristic and lower parasitic resistance demonstrate the excellent contact performance of the tin‐zinc oxide TFTs with AZO S/D electrodes.