Open AccessTransparent thin‐film transistor and diode circuit using graphene and amorphous indium–gallium–zinc‐oxide active layer
Author(s) -
Kim J.,
Jeong S.M.,
Jeong J.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.3086
Subject(s) - thin film transistor , materials science , optoelectronics , graphene , diode , electrode , layer (electronics) , transistor , amorphous solid , oxide thin film transistor , nanotechnology , electrical engineering , voltage , chemistry , engineering , organic chemistry
A transparent thin‐film transistor–diode (TFT–diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium–gallium–zinc–oxide (a‐IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT–diode device can be applied to transparent a‐IGZO and graphene integrated circuits.