Open AccessC‐band 60 W GaN power amplifier MMIC designed with harmonic tuned approach
Author(s) -
Yu Xuming,
Sun Huan,
Xu Yuehang,
Hong Wei
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.3017
Subject(s) - monolithic microwave integrated circuit , amplifier , duty cycle , materials science , electrical engineering , harmonic , microwave , electrical impedance , power added efficiency , rf power amplifier , voltage , optoelectronics , engineering , cmos , physics , telecommunications , acoustics
A C‐band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5–6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm).