Open Access901 nm Lithographic vertical‐cavity surface‐emitting laser with stable single‐lobed beam pattern
Author(s) -
Li M.,
Yang X.,
Zhang Y.,
Zhao G.,
Beadsworth J.,
Eifert L.,
Tucker F.,
Deppe D.G.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.3003
Subject(s) - materials science , lithography , vertical cavity surface emitting laser , optics , optoelectronics , laser , electron beam lithography , beam (structure) , photolithography , energy conversion efficiency , semiconductor laser theory , near and far field , resist , semiconductor , physics , nanotechnology , layer (electronics)
Data are presented on 901 nm lithographic vertical‐cavity surface‐emitting lasers (VCSELs) demonstrating high efficiency for small VCSEL sizes, and stable beam patterns. Power conversion efficiency >40% is obtained for VCSELs ranging in size from 6 to 2 µm diameter. The 2 µm diameter VCSELs produce output powers in excess of 6.5 mW, and produce single‐lobed far‐field radiation patterns over the full range of operation.