Open AccessTwo‐transistor and two‐magnetic‐tunnel‐junction multi‐level cell structured spin‐transfer torque magnetic random access memory with optimisations on power and reliability
Author(s) -
Tao Zihao,
Jia Ze
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2965
Subject(s) - spin transfer torque , tunnel magnetoresistance , transistor , random access , reliability (semiconductor) , electrical engineering , torque , magnetoresistive random access memory , power (physics) , power consumption , tunnel junction , computer science , materials science , electronic engineering , random access memory , engineering , optoelectronics , physics , computer hardware , quantum tunnelling , voltage , magnetic field , nanotechnology , magnetization , computer network , layer (electronics) , quantum mechanics , thermodynamics
A two‐transistor and two‐magnetic‐tunnel‐junction (MTJ) multi‐level cell (MLC) structure of spin‐transfer torque magnetic random access memory (STT‐RAM) is proposed. Compared with the conventional one‐transistor and two‐magnetic‐tunnel‐junction MLC STT‐RAMs, by adding an extra access transistor and adjusting the connection of the two MTJs, the extra write power consumption on the soft bit MTJ can be reduced, which will also have a benefit to the lifetime of the soft bit. Specifically, the simulation results show that more than 75% write power consumption on the soft bit can be wiped out, and the area cost caused by the extra access transistor is negligible.