Open AccessImproved high‐frequency output equivalent circuit modelling for MOSFETs
Author(s) -
Hong Seoyoung,
Lee Seonghearn
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2946
Subject(s) - equivalent circuit , capacitance , mosfet , equivalent series resistance , saturation (graph theory) , electronic engineering , materials science , saturation current , electrical engineering , engineering , physics , mathematics , voltage , transistor , electrode , quantum mechanics , combinatorics
An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y 22 ‐parameter error of a conventional one in the high‐frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain–source capacitance to model the ac current crowding phenomenon due to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding much better agreement up to 40 GHz between measured and modelled Y 22 ‐parameter than the conventional one.