Improved high‐frequency output equivalent circuit modelling for MOSFETs | Zendy

Hong Seoyoung | Zendy; Lee Seonghearn | Zendy

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Improved high‐frequency output equivalent circuit modelling for MOSFETs

Author(s) -

Hong Seoyoung,

Lee Seonghearn

Publication year - 2015

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2015.2946

Subject(s) - equivalent circuit , electronic engineering , electrical engineering , mosfet , circuit design , computer science , materials science , engineering , voltage , transistor

An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y 22 ‐parameter error of a conventional one in the high‐frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain–source capacitance to model the ac current crowding phenomenon due to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding much better agreement up to 40 GHz between measured and modelled Y 22 ‐parameter than the conventional one.

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