Open Access600 GHz InP HBT frequency multiplier
Author(s) -
Choi S.H.,
Urteaga M.,
Kim M.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2916
Subject(s) - heterojunction bipolar transistor , frequency multiplier , multiplier (economics) , optoelectronics , dbm , materials science , electrical engineering , bandwidth (computing) , indium phosphide , heterojunction , wafer , electronic engineering , bipolar junction transistor , gallium arsenide , engineering , transistor , cmos , telecommunications , voltage , amplifier , economics , macroeconomics
A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 μm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 μm finger devices in common‐base push–push configuration to obtain extremely simple matching networks. Measurements using on‐wafer RF probes indicate maximum output power of −8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.