
First‐order low‐pass negative group delay passive topology
Author(s) -
Ravelo B.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2856
Subject(s) - resistor , topology (electrical circuits) , group delay and phase delay , transfer function , bandwidth (computing) , electronic engineering , capacitor , electronic circuit , transient response , inductor , baseband , physics , computer science , engineering , electrical engineering , telecommunications , voltage
An innovative theory on the passive circuits capable to generate low‐pass negative group delay (NGD) behaviour is introduced. An identification method enabling to identify the first‐order NGD simple cells built with resistor‐inductor (RL)‐ and resistor‐capacitor (RC)‐networks is elaborated. The fundamental characteristics as the NGD level and cut‐off frequency are formulated from the low‐pass NGD circuit canonical transfer function. The NGD existence conditions are derived in function of the established topology parameters. Despite the attenuation systematically related to the passive cell nature, low‐pass NGD behaviours with tens ns NGD level and tens MHz bandwidth were obtained with an example of lumped RL‐network‐based L‐topology circuit. Transient analysis was performed to illustrate that the NGD phenomenon enables to exhibit baseband signal advance effect. The proposed NGD topology simplicity promises their potential applications especially in term of signal correction and the modern electronic system improvement.