Open AccessLattice parameter engineering for III–V long wave infrared photonics
Author(s) -
Belenky G.,
Lin Y.,
Shterengas L.,
Donetsky D.,
Kipshidze G.,
Suchalkin S.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2572
Subject(s) - band gap , materials science , lattice constant , heterojunction , photonic crystal , photoluminescence , fabrication , optoelectronics , modulation (music) , infrared , strain engineering , lattice (music) , photonics , alloy , condensed matter physics , optics , physics , diffraction , silicon , composite material , acoustics , medicine , alternative medicine , pathology
The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well‐regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSb x /InAsSb y pairs grown on a virtual GaIn z Sb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 µm. It is concluded that the growth of strain compensated InAsSb x /InAsSb y on virtual substrates allows developing narrow bandgap III–V materials with various bandgap energies.