Open AccessSolar‐blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V
Author(s) -
Brendel M.,
Helbling M.,
Knigge A.,
Brunner F.,
Weyers M.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2364
Subject(s) - photodetector , quantum efficiency , optoelectronics , materials science , wavelength , substrate (aquarium) , semiconductor , dark current , oceanography , geology
By utilising an asymmetric metallisation scheme to fabricate an AlGaN‐based solar‐blind metal–semiconductor–metal photodetector, a zero‐bias external quantum efficiency (EQE) of 24% for illumination at 240 nm wavelength from the substrate side was obtained. Moreover, an asymmetric bias‐dependence of dark current and EQE is observed. The EQE saturates at about 38% in reverse direction, whereas in forward direction the presence of an internal gain mechanism is indicated.