Open AccessCharacterisation and analytical modelling of GaN HEMT‐based varactor diodes
Author(s) -
Hamdoun A.,
Roy L.,
Himdi M.,
Lafond O.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2362
Subject(s) - varicap , high electron mobility transistor , diode , equivalent series resistance , capacitance , optoelectronics , materials science , equivalent circuit , transistor , gallium nitride , voltage , electronic engineering , electrical engineering , electrode , engineering , physics , layer (electronics) , quantum mechanics , composite material
Varactor diodes fabricated in 0.5 and 0.15 µm GaN HEMT (high‐electron‐mobility transistor) processes are modelled. The devices were characterised via DC and RF small‐signal measurements up to 20 GHz, and fitted to a simple physical equivalent circuit. Approximate analytical expressions containing empirical coefficients are introduced for the voltage dependency of capacitance and series resistance. The analytical solutions agree remarkably well with the experimentally extracted C–V curves and can be used as a general model to represent the nonlinear behaviour of GaN‐based varactors devices.