
Self‐judgement flip coding for resistive random access memory
Author(s) -
Xiang Zhongyuan,
Zhang Feng
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2332
Subject(s) - resistive random access memory , computer science , joule heating , schematic , coding (social sciences) , energy consumption , crosstalk , reset (finance) , data retention , electronic engineering , voltage , electrical engineering , engineering , mathematics , computer security , statistics , financial economics , economics
A novel low‐energy write scheme, self‐judgement flip coding (SJFC), for resistive random access memory (RRAM) is proposed. Lots of energy will be consumed in the write process of RRAM, especially in the reset process. Owing to RRAM being sensitive to heat, excessive heat accumulation will lead to thermal crosstalk. Through reading original data, SJFC analyses and computes the Joule heat produced in the write data flow and further judges whether to make flip coding on the write data flow. The result is that between the original write data flow and flip coding data flow, the one producing lesser energy will be transmitted to the write circuit to produce lesser energy in the RRAM write process. The stimulation result shows that SJFC could reduce energy consumption by 39% on average in the write process.