Open Access84 GBd (168 Gbit/s) PAM‐4 3.7 V pp power DAC in InP DHBT for short reach and long haul optical networks
Author(s) -
Konczykowska A.,
Jorge F.,
Dupuy JY.,
Riet M.,
Nodjiadjim V.,
Aubry H.,
Adamiecki A.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2316
Subject(s) - heterojunction bipolar transistor , gigabit , modulation (music) , amplitude , pulse amplitude modulation , multiplexing , electrical engineering , figure of merit , signal (programming language) , optoelectronics , amplitude modulation , electronic engineering , transmission (telecommunications) , optical communication , power (physics) , physics , transistor , optics , computer science , pulse (music) , bipolar junction transistor , engineering , frequency modulation , voltage , radio frequency , quantum mechanics , acoustics , programming language
The architecture and performances of a multilevel driver for pulse amplitude modulation (PAM) formats, designed and fabricated in 0.7 µm InP double‐heterojunction bipolar transistor technology, are reported. The driver part is based on a power‐DAC architecture which is integrated with the multiplexing stage composed of three 2:1 selectors. Up to 100 GS/s operation was validated and PAM‐2, ‐4, ‐8 signals with high amplitude were measured. In particular, PAM‐4 at 84 GBd and PAM‐8 at 64 GBd operation was demonstrated with, respectively, a 3.7 and 4 V pp differential output signal. This compact driver circuit is characterised by the highest merit factor in terms of high amplitude and the transmission capacity for an electronically generated multilevel signal.