Investigation of traps in strained‐well InGaAs/GaAsSb quantum well photodiodes

InP‐based strained‐well InGaAs/GaAsSb quantum well photodiodes with non‐zero net strain can be used to extend detection wavelengths well into the mid‐infrared region. However, excess dark current due to defects in the structure can be a performance limiting factor in photodiodes of this type. In this reported work, both low‐frequency noise spectroscopy and deep level transient spectroscopy were used to investigate traps in prototypical strained‐well photodiode heterostructures. Two distinct traps were identified and their electrical and physical properties and distributions have been evaluated.