Open AccessMicrostrip slow‐wave line for phase shifting cells
Author(s) -
Gastaldi M.,
Dragomirescu D.,
Takacs A.,
Armengaud V.,
Rochette S.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2148
Subject(s) - microstrip , transmission line , line (geometry) , cmos , electric power transmission , electronic engineering , materials science , bicmos , phase (matter) , insertion loss , electrical engineering , optoelectronics , physics , engineering , transistor , voltage , mathematics , geometry , quantum mechanics
The design, simulation and measurements of microstrip slow‐wave lines implemented in a 0.25 µm SiGe bipolar CMOS (BiCMOS) process is addressed for Ku‐band (10–15 GHz) applications. The simulation results and the measurements show better performances for the proposed microstrip slow‐wave line compared with the classical microstrip transmission line. These lines present very low insertion losses and a high phase constant.