Open AccessRandom telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO 2
Author(s) -
Nour M.,
ÇelikButler Z.,
Sonnet A.,
Hou F.C.,
Tang S.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.2074
Subject(s) - trap (plumbing) , oxide , oxygen , transistor , activation energy , relaxation (psychology) , electron , band gap , materials science , vacancy defect , energy (signal processing) , penning trap , atomic physics , semiconductor , optoelectronics , chemistry , physics , condensed matter physics , voltage , psychology , social psychology , organic chemistry , quantum mechanics , meteorology , metallurgy
Unrelaxed neutral oxygen deficiency centres (ODCs) (V 0 ODC II) in SiO 2 have been identified as the cause of random telegraph signals (RTSs) in highly scaled n‐type metal–oxide–semiconductor field‐effect transistors. Variable temperature RTS measurements were performed to extract trap capture cross‐sections, capture activation energy, relaxation energy associated with the gate oxide defects, and the trap energy in the SiO 2 bandgap to determine the trap species and type. The results indicate that the electron is captured by a neutral ODC that is transformed into a negatively charged vacancy (V − ). This is the first time V 0 ODC II centre is confirmed to be the source of electron switching through RTS measurements defining four different trap characteristics.