Open AccessHigh mobility transparent flexible nickel‐doped zinc oxide thin‐film transistors with small subthreshold swing
Author(s) -
Huang Lingling,
Han Dedong,
Zhang Yi,
Shi Pan,
Yu Wen,
Cui Guodong,
Cong Yingying,
Dong Junchen,
Zhang Shengdong,
Zhang Xing,
Wang Yi
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.2041
Subject(s) - materials science , thin film transistor , optoelectronics , sputtering , sputter deposition , threshold voltage , saturation (graph theory) , doping , transistor , thin film , subthreshold slope , electron mobility , zinc , voltage , electrical engineering , nanotechnology , metallurgy , layer (electronics) , engineering , mathematics , combinatorics
High‐mobility nickel (Ni)‐doped zinc oxide thin‐film transistors (NZO TFTs) have been successfully fabricated on flexible transparent plastic substrates at a low temperature. The devices all exhibited good electrical properties with small subthreshold swing (SS) and high saturation mobility fabricated under different sputtering pressure (0.4, 0.8, 1.2, 1.6 Pa) during channel deposition by RF magnetron sputtering were found. The electrical properties of NZO TFTs reached the best when the sputtering pressure was 1.6 Pa, with an SS of 89 mV/decade, a saturation mobility of 172 cm 2 ·V −1 ·s −1 , a drain current on/off ratio of 10 8 , and a positive threshold voltage of 2.36 V. The results show that Ni‐doped ZnO is a promising candidate for flexible fully transparent displays.