Open AccessFabrication of p‐pad‐up GaN‐based thin‐film light‐emitting diodes with electroplated metallic substrates
Author(s) -
Hu Xiaolong,
Liu Li,
Wang Hong
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1982
Subject(s) - materials science , light emitting diode , optoelectronics , electroplating , layer (electronics) , wafer , substrate (aquarium) , diode , sapphire , epitaxy , copper plating , fabrication , laser , composite material , optics , medicine , oceanography , physics , alternative medicine , pathology , geology
A novel method has been developed to fabricate p‐pad‐up GaN‐based thin‐film light‐emitting diodes (TF‐LEDs) with electroplated metallic substrates. First, a Ni/Ag/Ni/Au mirror severed as p‐contact is totally covered by an insulating SiN x layer, which separates n‐contact from the p‐contact. Then, a copper layer connected with the n‐contact was electroplated to a thickness of about 120 μm as a metallic substrate for the light‐emitting diode epitaxial wafer. After removal of the original sapphire substrate with an excimer laser, the exposed GaN layers were selectively etched to the p‐contact. Finally, a Cr/Pt/Au multilayer was deposited onto the p‐contact to complete the whole p‐pad‐up TF‐LED structure. The p‐pad‐up TF‐LEDs exhibit superior electrical and optical properties at high driven current densities.