Open AccessPerformance of standard and double‐sided 3D‐radiation detectors under the impact of a temperature pulse
Author(s) -
Abouelatta M.,
Shaker A.,
Gontrand C.,
Ossaimee M.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1963
Subject(s) - detector , waveform , physics , particle detector , signal (programming language) , radiation , noise (video) , optics , pulse (music) , optoelectronics , materials science , voltage , computer science , quantum mechanics , artificial intelligence , image (mathematics) , programming language
In this Letter, a comparison of the electrical performances of a standard and a double‐sided 3D‐radiation detectors using TCAD simulations is performed. The transient simulation is used to investigate the charge collection performance by swamping the detector with a uniform concentration of EHPs (75 e‐h pairs/µm), chosen to give the same total number of carriers as a minimum ionising particle. Both detectors can be biased with the same voltage level of the readout circuitry in the standard 0.35 µm BiCMOS technology, but the standard full 3D structure is preferred for its high collection charge which means high signal to noise ratio. Finally, the impact of a temperature (300−400 K) pulse with fast transition times is studied. The impact has no significant effect on the collection current waveform of the standard but it has a big influence of the current waveform of the double‐sided 3D‐detectors. This makes the standard 3D‐detector favourable than the double‐sided 3D‐detector in a harsh environment.