
gaN gains
Publication year - 2015
Publication title -
electronics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1944
Subject(s) - optoelectronics , semiconductor , gallium nitride , engineering physics , electric field , avalanche breakdown , diode , materials science , charge carrier , band gap , semiconductor device , substrate (aquarium) , light emitting diode , electrical engineering , physics , nanotechnology , voltage , engineering , breakdown voltage , oceanography , layer (electronics) , quantum mechanics , geology