Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers | Zendy

Alhashim H.H. | Zendy; Khan M.Z.M. | Zendy; Majid M.A. | Zendy; Ng T.K. | Zendy; Ooi B.S. | Zendy

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Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers

Author(s) -

Alhashim H.H.,

Khan M.Z.M.,

Majid M.A.,

Ng T.K.,

Ooi B.S.

Publication year - 2015

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2015.1803

Subject(s) - lasing threshold , optoelectronics , laser , materials science , quantum dot laser , quantum dot , quantum well , wavelength , semiconductor laser theory , optics , semiconductor , physics

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum‐dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non‐coated facet Fabry‐Pērot post‐growth wavelength tuned lasers exhibits high‐power (>1.4W) and high‐gain (∼50 cm −1 ), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

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