Open AccessSub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers
Author(s) -
Alhashim H.H.,
Khan M.Z.M.,
Majid M.A.,
Ng T.K.,
Ooi B.S.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1803
Subject(s) - lasing threshold , optoelectronics , laser , materials science , quantum dot laser , quantum dot , quantum well , wavelength , semiconductor laser theory , optics , semiconductor , physics
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum‐dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non‐coated facet Fabry‐Pērot post‐growth wavelength tuned lasers exhibits high‐power (>1.4W) and high‐gain (∼50 cm −1 ), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.